Systematic Calibration of AC MOSFET Model Parameters
Including Non-Quasi-Static Effect
Paolo Miliozzi, Mishel Matloubian, Mark Tennyson
Abstract:
In this paper a novel technique for simultaneous calibration
of critical AC MOSFET model parameters is presented.
The approach was developed to specifically address new AC
parameters introduced to model deep-submicron effects.
The technique is valid in general and was applied to
BSIM3v3.1, currently considered the industrial
standard non-proprietary model.
The significance of these new AC parameters, as well as of NQS effects
are highlighted.
Using the proposed calibration methodology,
we were able to increase the simulation accuracy and hence to reduce
the error with respect to measure data from as high as 35% to less
than 3%.