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BSIM
BSIM3 is a physical MOSFET model with extensive built-in dependencies
of important dimensional and processing parameters such as channel
length, width, gate oxide thickness, junction depth, substrate doping
concentration, and so on. It allows users to accurately model MOSFET
behavior over a wide range of channel lengths for present and future
technologies. Using a coherent pseudo 2D formulation, major
short-channel effects and high field effects such as threshold voltage
roll-off, non-uniform doping effect, mobility reduction due to
vertical field, carrier velocity saturation, channel-length
modulation, drain induced barrier lowering, substrate current-induced
body effect, subthreshold conduction, parasitic resistance effect,
quantum effects, and LDD effect are included. Meticulous care has been
taken to retain the physical functional relationships and achieve a
high level of model accuracy and computational efficiency. The effects
of variations in these parameters on the device AC and DC
characteristics are built into the model. The predictive feature of
BSIM3 makes statistical modeling of the device in the presence of
fabrication process variations considerally simpler.
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